Correction: Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests
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چکیده
منابع مشابه
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following thi...
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ژورنال
عنوان ژورنال: Chemical Communications
سال: 2017
ISSN: 1359-7345,1364-548X
DOI: 10.1039/c7cc90034a